PART |
Description |
Maker |
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
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Alliance Semiconductor Corporation ALSC
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HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
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SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Q67100-Q3017 HM364035 HYM364035GS-60 HYM364035S HY |
4M x 36 Bit EDO DRAM Module with Parity From old datasheet system 4M x 36-Bit EDO-DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
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Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50 INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50 4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
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http:// SIEMENS A G SIEMENS AG
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HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
K4E151611D-JL50 K4E151612D-TL50 |
1M X 16 EDO DRAM, 50 ns, PDSO42 1M X 16 EDO DRAM, 50 ns, PDSO44
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HYB3116165BSJ-70 HYB3116165BST-70 HYB3118165BSJ-70 |
1M X 16 EDO DRAM, 70 ns, PDSO42 1M X 16 EDO DRAM, 70 ns, PDSO44
|
SIEMENS AG
|
HYM72V2005GS-60 HYM72V2005GS-50 HYM72V2005GS-50- |
-2M x 72-Bit EDO-DRAM Module 2M x 72-Bit EDO-DRAM Module (ECC - Module) 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 50 ns, DMA168
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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IBM0116405P IBM0116405B |
4M x 4 12/10 EDO DRAM(16M动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)) 4米4 120日EDO公司的DRAM,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通) 4M x 4 12/10 EDO DRAM(16M浣??ㄦ?RAM锛??椤甸?妯″?璇诲?骞跺甫22?″???嚎锛??涓?2?′负琛????????10?′负?????????)
|
IBM Microeletronics International Business Machines, Corp.
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IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式(3.3伏,4米4带扩展数据输出页模式动态随机存储器(刷k)的 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
HYB3165405BT-40 HYB3164405BT-40 HYB3164405BJ-40 HY |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 40 ns, PDSO32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
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http:// Infineon Technologies AG SIEMENS AG
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